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In-plane transport and enhanced thermoelectric performance in thin films of the topological insulators Bi_2Te_3 and Bi_2Se_3

机译:薄膜内的平面传输和增强的热电性能   拓扑绝缘体Bi_2Te_3和Bi_2se_3

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摘要

Several small-bandgap semiconductors are now known to have protected metallicsurface states as a consequence of the topology of the bulk electronwavefunctions. The known "topological insulators" with this behavior includethe important thermoelectric materials Bi_2Te_3 and Bi_2Se_3, whose surfacesare observed in photoemission experiments to have an unusual electronicstructure with a single Dirac cone. We study in-plane (i.e., horizontal)transport in thin films made of these materials. The surface states from topand bottom surfaces hybridize, and conventional diffusive transport predictsthat the tunable hybridization-induced band gap leads to increasedthermoelectric performance at low temperatures. Beyond simple diffusivetransport, the conductivity shows a crossover from the spin-orbit inducedanti-localization at a single surface to ordinary localization.
机译:由于体电子波函数的拓扑结构,现在已知几种小带隙半导体具有受保护的金属表面态。具有这种行为的已知“拓扑绝缘体”包括重要的热电材料Bi_2Te_3和Bi_2Se_3,在光发射实验中观察到它们的表面具有单个狄拉克锥的异常电子结构。我们研究了由这些材料制成的薄膜的平面内(即水平)传输。来自顶表面和底表面的表面状态发生杂交,并且常规扩散传输预测可调谐杂交诱导的带隙导致低温下热电性能的提高。除了简单的扩散传输,电导率还显示出自旋轨道在单表面上诱导的反定位到普通定位的交叉。

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